The design of CMOS (Complementary Metal-Oxide-Semiconductor) and CNTFET (Carbon Nanotube Field-Effect Transistor) comparators can employ various methods, each with distinct operating speeds, power consumption, and circuit complexity. The size of the circuit is influenced by factors such as the number and size of transistors as well as the wiring density. Wiring complexity is determined by the number of connections and their lengths. These parameters can vary significantly across different logic styles, and selecting the appropriate style is crucial for achieving the desired circuit performance. The main objective of all design styles and modifications is to reduce the number of transistors required to perform the logic, minimize power consumption, and increase speed. Using fewer transistors also allows for more devices to be placed on a single silicon chip, resulting in a reduction in the total area required.
Author(s) Details:
Ch. Ganesh,
Electronics and Communication Engineering, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India.
T. Sravan Kumar,
Electronics and Communication Engineering, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India.
S. Pallavi,
Electronics and Communication Engineering, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India.
G. Sai Preetham Reddy,
Electronics and Communication Engineering, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India.
